RFL1N12
Part NoRFL1N12
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)120 V
Current-ContinuousDrain(Id)@25°C1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.9Ohm @ 1A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)200 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature8.33W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-205AF (TO-39)
GateCharge(Qg)(Max)@VgsTO-205AF Metal Can
Grade
Qualification
In Stock:
6322
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.748 | |
| 10 | 0.733 | |
| 100 | 0.7106 | |
| 1000 | 0.6882 | |
| 10000 | 0.6582 |
Associated Product
