FDFM2N111

Part NoFDFM2N111

Manufactureronsemi

DescriptionMOSFET N-CH 20V 4A MICROFET

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Specification

PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®

SeriesPowerTrench®

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)20 V

Current-ContinuousDrain(Id)@25°C4A (Ta)

DriveVoltage(MaxRdsOn2.5V, 4.5V

MinRdsOn)100mOhm @ 4A, 4.5V

RdsOn(Max)@Id1.5V @ 250µA

Vgs3.8 nC @ 4.5 V

Vgs(th)(Max)@Id±12V

Vgs(Max)273 pF @ 10 V

InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Isolated)

FETFeature1.7W (Ta)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeMicroFET 3x3mm

SupplierDevicePackage6-WDFN Exposed Pad

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 15801
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