IXFV96N20P

Part NoIXFV96N20P

ManufacturerIXYS

DescriptionMOSFET N-CH 200V 96A PLUS 220

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Specification

Vgs(th) (Max) @ Id5V @ 4mA

Vgs (Max)±20V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackagePLUS220

SeriesPolarHT™ HiPerFET™

Rds On (Max) @ Id, Vgs24 mOhm @ 500mA, 10V

Power Dissipation (Max)600W (Tc)

PackagingTube

Package / CaseTO-220-3, Short Tab

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Moisture Sensitivity Level (MSL)1 (Unlimited)

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds4800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs145nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)200V

Detailed DescriptionN-Channel 200V 96A (Tc) 600W (Tc) Through Hole PLUS220

Current - Continuous Drain (Id) @ 25°C96A (Tc)

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