SIHG039N60E-GE3
Part NoSIHG039N60E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 63A TO247AC
Datasheet
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ECAD Module
Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C63A (Tc)
DriveVoltage(MaxRdsOn39mOhm @ 32A, 10V
MinRdsOn)5V @ 250µA
RdsOn(Max)@Id126 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id4369 pF @ 100 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds357W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247AC
MountingTypeTO-247-3
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7621
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.4352 | |
| 10 | 12.1865 | |
| 100 | 11.8134 | |
| 1000 | 11.4404 | |
| 10000 | 10.943 |
Associated Product
