IXFN32N120P
Part NoIXFN32N120P
ManufacturerIXYS
DescriptionMOSFET N-CH 1200V 32A SOT-227B
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHiPerFET™, Polar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C32A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)310mOhm @ 500mA, 10V
RdsOn(Max)@Id6.5V @ 1mA
Vgs360 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)21000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1000W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSOT-227B
SupplierDevicePackageSOT-227-4, miniBLOC
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6195
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 78.47 | |
| 10 | 76.9006 | |
| 100 | 74.5465 | |
| 1000 | 72.1924 | |
| 10000 | 69.0536 |
Associated Product
