FQA6N80
Part NoFQA6N80
Manufactureronsemi
DescriptionMOSFET N-CH 800V 6.3A TO3P
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C6.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.95Ohm @ 3.15A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs31 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature185W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3P
SupplierDevicePackageTO-3P-3, SC-65-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12983
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.121 | |
| 10 | 1.0986 | |
| 100 | 1.0649 | |
| 1000 | 1.0313 | |
| 10000 | 0.9865 |
Associated Product
