IMYH200R100M1HXKSA1
Part NoIMYH200R100M1HXKSA1
ManufacturerInfineon Technologies
DescriptionSIC DISCRETE
Datasheet
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ECAD Module
Specification
PackageTube
SeriesCoolSiC™
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)2000 V
Current-ContinuousDrain(Id)@25°C26A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)131mOhm @ 10A, 18V
RdsOn(Max)@Id5.5V @ 6mA
Vgs55 nC @ 18 V
Vgs(th)(Max)@Id+20V, -7V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature217W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypePG-TO247-4-U04
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4268
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.528 | |
| 10 | 24.0374 | |
| 100 | 23.3016 | |
| 1000 | 22.5658 | |
| 10000 | 21.5846 |
Associated Product
