RQ3E100BNTB
Part NoRQ3E100BNTB
ManufacturerLAPIS Semiconductor
DescriptionMOSFET N-CH 30V 10A HSMT8
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2.5V @ 1mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-HSMT (3.2x3)
Series-
Rds On (Max) @ Id, Vgs10.4 mOhm @ 10A, 10V
Power Dissipation (Max)2W (Ta)
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Other NamesRQ3E100BNTBTR
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time40 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 10A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Current - Continuous Drain (Id) @ 25°C10A (Ta)
In Stock:
15608
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4387 | |
| 10 | 0.4299 | |
| 100 | 0.4168 | |
| 1000 | 0.4036 | |
| 10000 | 0.3861 |
Associated Product
