MSCSM120HM083AG
Part NoMSCSM120HM083AG
ManufacturerMicrochip Technology
DescriptionSIC 4N-CH 1200V 251A
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration4 N-Channel (Full Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C251A (Tc)
RdsOn(Max)@Id10.4mOhm @ 120A, 20V
Vgs2.8V @ 9mA
Vgs(th)(Max)@Id696nC @ 20V
GateCharge(Qg)(Max)@Vgs9000pF @ 1000V
InputCapacitance(Ciss)(Max)@Vds1.042kW (Tc)
Power-Max-40°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeModule
Package/Case-
SupplierDevicePackage-
Grade-
Qualification
In Stock:
3900
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 705.8075 | |
| 10 | 691.6913 | |
| 100 | 670.5171 | |
| 1000 | 649.3429 | |
| 10000 | 621.1106 |
Associated Product
