JAN2N6798
Part NoJAN2N6798
ManufacturerMicrosemi
DescriptionMOSFET N-CH 200V 5.5A TO39
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesMilitary, MIL-PRF-19500/557
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C5.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)420mOhm @ 5.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs42.07 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds800mW (Ta), 25W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-39
Package/CaseTO-205AF Metal Can
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
7581
Pricing
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Associated Product
