STP12N65M2
Part NoSTP12N65M2
ManufacturerSTMicroelectronics
DescriptionPOWER MOSFET
Datasheet
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ECAD Module
Specification
PackageTube
SeriesMDmesh™ DM2
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C8A (Tc)
DriveVoltage(MaxRdsOn0V, 10V
MinRdsOn)500mOhm @ 4A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs16.7 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)535 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature85W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4381
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9212 | |
| 10 | 0.9028 | |
| 100 | 0.8751 | |
| 1000 | 0.8475 | |
| 10000 | 0.8107 |
Associated Product
