S2M0025120D
Part NoS2M0025120D
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C63A (Tj)
DriveVoltage(MaxRdsOn20V
MinRdsOn)34mOhm @ 50A, 20V
RdsOn(Max)@Id4V @ 15mA
Vgs130 nC @ 20 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)4402 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature446W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AD
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
10180
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 44.044 | |
| 10 | 43.1631 | |
| 100 | 41.8418 | |
| 1000 | 40.5205 | |
| 10000 | 38.7587 |
Associated Product
