TP65H050WSQA
Part NoTP65H050WSQA
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 36A TO247-3
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C36A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)60mOhm @ 25A, 10V
RdsOn(Max)@Id4.8V @ 700µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1000 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature150W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
3317
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.5494 | |
| 10 | 19.1584 | |
| 100 | 18.5719 | |
| 1000 | 17.9854 | |
| 10000 | 17.2035 |
Associated Product
