IRFSL9N60APBF
Part NoIRFSL9N60APBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 9.2A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C9.2A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)750mOhm @ 5.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs49 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1400 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature170W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14320
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.3925 | |
| 10 | 2.3447 | |
| 100 | 2.2729 | |
| 1000 | 2.2011 | |
| 10000 | 2.1054 |
Associated Product
