2SJ530S

2SJ530S

Part No2SJ530S
ManufacturerVBsemi
Description-
Datasheet Download Now!
ECAD Module 2SJ530S
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)60V
Continuous Drain Current (Id)30A
Power Dissipation (Pd)4W
Drain Source On Resistance (RDS(on)@Vgs,Id)61mu03a9@10V,5A
Gate Threshold Voltage (Vgs(th)@Id)3V@250u03bcA
TypePu6c9fu9053
In Stock: 11418
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 0.1138
10 0.1115
100 0.1081
1000 0.1047
10000 0.1002
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
SIA429DJT-T1-GE3
SIA429DJT-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 12A PPAK SC70-6
SIR808DP-T1-GE3
SIR808DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 20A PPAK SO-8
MMA7456LR1
MMA7456LR1
NXP USA Inc.
ACCELEROMETER 2-8G I2C/SPI 14LGA
IXTP120N075T2
IXTP120N075T2
IXYS
MOSFET N-CH 75V 120A TO220AB
FDS2070N7
FDS2070N7
onsemi
MOSFET N-CH 150V 4.1A 8SO
RQA0002DNSTB-E
RQA0002DNSTB-E
Renesas
RQA0002DNS - N CHANNEL MOSFET