SIA429DJT-T1-GE3
Part NoSIA429DJT-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 12A PPAK SC70-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn1.5V, 4.5V
MinRdsOn)20.5mOhm @ 6A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs62 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)1750 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15069
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6 | |
| 10 | 0.588 | |
| 100 | 0.57 | |
| 1000 | 0.552 | |
| 10000 | 0.528 |
Associated Product
