SI2312BDS-T1-E3

SI2312BDS-T1-E3

Part NoSI2312BDS-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 3.9A SOT23-3
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ECAD Module SI2312BDS-T1-E3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C3.9A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)31mOhm @ 5A, 4.5V
RdsOn(Max)@Id850mV @ 250µA
Vgs12 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature750mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 41109
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 0.6105
10 0.5983
100 0.58
1000 0.5617
10000 0.5372
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product