SI4800BDY-T1-GE3

Part NoSI4800BDY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 6.5A 8SO

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ECAD Module

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Specification

PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®

SeriesTrenchFET®

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)30 V

Current-ContinuousDrain(Id)@25°C6.5A (Ta)

DriveVoltage(MaxRdsOn4.5V, 10V

MinRdsOn)18.5mOhm @ 9A, 10V

RdsOn(Max)@Id1.8V @ 250µA

Vgs13 nC @ 5 V

Vgs(th)(Max)@Id±25V

Vgs(Max)-

InputCapacitance(Ciss)(Max)@Vds-

FETFeature1.3W (Ta)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperature-

MountingType-

SupplierDevicePackageSurface Mount

Package/Case8-SOIC

GateCharge(Qg)(Max)@Vgs8-SOIC (0.154, 3.90mm Width)

Grade

Qualification

In Stock: 33183
available for immediate sale in a store

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