SI8800EDB-T2-E1

SI8800EDB-T2-E1

Part NoSI8800EDB-T2-E1
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 4MICROFOOT
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ECAD Module SI8800EDB-T2-E1
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C2A (Ta)
DriveVoltage(MaxRdsOn1.5V, 4.5V
MinRdsOn)80mOhm @ 1A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs8.3 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature500mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType4-Microfoot
SupplierDevicePackage4-XFBGA, CSPBGA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 20819
available for immediate sale in a store
Pricing
QTY UNIT PRICE EXT PRICE
1 0.522
10 0.5116
100 0.4959
1000 0.4802
10000 0.4594
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product