SIHA24N80AE-GE3
Part NoSIHA24N80AE-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 800V 9A TO220
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)184mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs89 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1836 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220 Full Pack
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2717
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.0544 | |
| 10 | 2.9933 | |
| 100 | 2.9017 | |
| 1000 | 2.81 | |
| 10000 | 2.6879 |
Associated Product
