FDP4D5N10C
Part NoFDP4D5N10C
Manufactureronsemi
DescriptionMOSFET N-CH 100V 128A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPowerTrench®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C128A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.5mOhm @ 100A, 10V
RdsOn(Max)@Id4V @ 310µA
Vgs68 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5065 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.4W (Ta), 150W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14118
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.6745 | |
| 10 | 5.561 | |
| 100 | 5.3908 | |
| 1000 | 5.2205 | |
| 10000 | 4.9936 |
Associated Product
