IPP04CN10NGXKSA1
Part NoIPP04CN10NGXKSA1
ManufacturerInfineon
DescriptionMV POWER MOS
Datasheet
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ECAD Module
Specification
PackageTube
SeriesOptiMOS™ 2
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.2mOhm @ 100A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id-
Vgs(Max)300W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)PG-TO220-3
OperatingTemperatureTO-220-3
MountingType210 nC @ 10 V
SupplierDevicePackage13800 pF @ 50 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8844
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.8454 | |
| 10 | 2.7885 | |
| 100 | 2.7031 | |
| 1000 | 2.6178 | |
| 10000 | 2.504 |
Associated Product
