IRL620S

Part NoIRL620S

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 5.2A D2PAK

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ECAD Module

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Specification

PackageTube

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)200 V

Current-ContinuousDrain(Id)@25°C5.2A (Tc)

DriveVoltage(MaxRdsOn4V, 10V

MinRdsOn)800mOhm @ 3.1A, 10V

RdsOn(Max)@Id2V @ 250µA

Vgs16 nC @ 5 V

Vgs(th)(Max)@Id±10V

Vgs(Max)360 pF @ 25 V

InputCapacitance(Ciss)(Max)@Vds-

FETFeature3.1W (Ta), 50W (Tc)

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingTypeTO-263 (D2PAK)

SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

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