IRF710B
Part NoIRF710B
Manufactureronsemi
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)2A (Tc)
Current-ContinuousDrain(Id)@25°C10V
DriveVoltage(MaxRdsOn3.4Ohm @ 1A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id±30V
Vgs-
Vgs(th)(Max)@Id36W (Tc)
Vgs(Max)-55°C ~ 150°C (TJ)
InputCapacitance(Ciss)(Max)@VdsThrough Hole
FETFeatureTO-220
PowerDissipation(Max)TO-220-3
OperatingTemperature400 V
MountingType10 nC @ 10 V
SupplierDevicePackage330 pF @ 25 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
9973
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.207 | |
| 10 | 0.2029 | |
| 100 | 0.1966 | |
| 1000 | 0.1904 | |
| 10000 | 0.1822 |
Associated Product
