SI3475DV-T1-E3
Part NoSI3475DV-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 200V 950MA 6TSOP
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C950mA (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)1.61Ohm @ 900mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs18 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)500 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2W (Ta), 3.2W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
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available for immediate sale in a store
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Associated Product
