TK10A60W,S4VX
Part NoTK10A60W,S4VX
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 600V 9.7A TO220SIS
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C9.7A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)380mOhm @ 4.9A, 10V
RdsOn(Max)@Id3.7V @ 500µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)700 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature30W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5034
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.546 | |
| 10 | 2.4951 | |
| 100 | 2.4187 | |
| 1000 | 2.3423 | |
| 10000 | 2.2405 |
Associated Product
