SIHA21N60EF-GE3
Part NoSIHA21N60EF-GE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 600V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)176mOhm @ 11A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs84 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2030 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220 Full Pack
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3036
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.3618 | |
| 10 | 4.2746 | |
| 100 | 4.1437 | |
| 1000 | 4.0129 | |
| 10000 | 3.8384 |
Associated Product
