FCP099N65S3
Part NoFCP099N65S3
Manufactureronsemi
DescriptionMOSFET N-CH 650V 30A TO220-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4.5V @ 3mA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesSuperFET® III
Rds On (Max) @ Id, Vgs99 mOhm @ 15A, 10V
Power Dissipation (Max)227W (Tc)
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Input Capacitance (Ciss) (Max) @ Vds2480pF @ 400V
Gate Charge (Qg) (Max) @ Vgs61nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)650V
Detailed DescriptionN-Channel 650V 30A (Tc) 227W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C30A (Tc)
In Stock:
20683
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.504 | |
| 10 | 4.4139 | |
| 100 | 4.2788 | |
| 1000 | 4.1437 | |
| 10000 | 3.9635 |
Associated Product
