FCP190N60E
Part NoFCP190N60E
Manufactureronsemi
DescriptionMOSFET N-CH 600V 20.6A TO220-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id3.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220
SeriesSuperFET® II
Rds On (Max) @ Id, Vgs190 mOhm @ 10A, 10V
Power Dissipation (Max)208W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time52 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3175pF @ 25V
Gate Charge (Qg) (Max) @ Vgs82nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)600V
Detailed DescriptionN-Channel 600V 20.6A (Tc) 208W (Tc) Through Hole TO-220
Current - Continuous Drain (Id) @ 25°C20.6A (Tc)
In Stock:
18931
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.5052 | |
| 10 | 3.4351 | |
| 100 | 3.3299 | |
| 1000 | 3.2248 | |
| 10000 | 3.0846 |
Associated Product
