FDB024N08BL7
RoHS

FDB024N08BL7

Part NoFDB024N08BL7
Manufactureronsemi
DescriptionMOSFET N-CH 80V 120A TO263-7
Datasheet Download Now!
ECAD Module FDB024N08BL7
Get Quotation Now!
Specification
Vgs(th) (Max) @ Id4.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263)
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs2.4 mOhm @ 100A, 10V
Power Dissipation (Max)246W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Other NamesFDB024N08BL7CT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time40 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds13530pF @ 40V
Gate Charge (Qg) (Max) @ Vgs178nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)80V
Detailed DescriptionN-Channel 80V 120A (Tc) 246W (Tc) Surface Mount D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C120A (Tc)
In Stock: 15982
Pricing
QTY UNIT PRICE EXT PRICE
1 4.4426
10 4.3537
100 4.2205
1000 4.0872
10000 3.9095
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
IRFHM8228TRPBF
IRFHM8228TRPBF
Infineon
MOSFET N-CH 25V 19A 8PQFN
BUK9K134-100EX
BUK9K134-100EX
Nexperia
MOSFET 2N-CH 100V 8.5A LFPAK56D
IRFHM8363TR2PBF
IRFHM8363TR2PBF
Infineon
MOSFET 2N-CH 30V 11A 8PQFN
3LN03M-TL-E
3LN03M-TL-E
Sanyo
N-CHANNEL SILICON MOSFET
EPC2105
EPC2105
EPC
GANFET 2N-CH 80V 9.5A/38A DIE
AM50N06-15D-CT
AM50N06-15D-CT
Analog Power Inc.
MOSFET N-CH 60V 51A TO-252 (D-Pa