FDB6670AL
Part NoFDB6670AL
Manufactureronsemi
DescriptionMOSFET N-CH 30V 80A TO263AB
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-263AB
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs6.5 mOhm @ 40A, 10V
Power Dissipation (Max)68W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature-65°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2440pF @ 15V
Gate Charge (Qg) (Max) @ Vgs33nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 80A (Ta) 68W (Tc) Surface Mount TO-263AB
Current - Continuous Drain (Id) @ 25°C80A (Ta)
In Stock:
22090
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1232 | |
| 10 | 1.1007 | |
| 100 | 1.067 | |
| 1000 | 1.0333 | |
| 10000 | 0.9884 |
Associated Product
