FDB8880
Part NoFDB8880
Manufactureronsemi
DescriptionMOSFET N-CH 30V 11A/54A TO263AB
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-263AB
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs11.6 mOhm @ 40A, 10V
Power Dissipation (Max)55W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesFDB8880-ND
FDB8880TR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 11A (Ta), 54A (Tc) 55W (Tc) Surface Mount TO-263AB
Current - Continuous Drain (Id) @ 25°C11A (Ta), 54A (Tc)
In Stock:
15681
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Associated Product
