FDC658AP
Part NoFDC658AP
Manufactureronsemi
DescriptionMOSFET P-CH 30V 4A SUPERSOT6
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageSuperSOT™-6
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs50 mOhm @ 4A, 10V
Power Dissipation (Max)1.6W (Ta)
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Other NamesFDC658APTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time30 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds470pF @ 15V
Gate Charge (Qg) (Max) @ Vgs8.1nC @ 5V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C4A (Ta)
In Stock:
28063
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.666 | |
| 10 | 0.6527 | |
| 100 | 0.6327 | |
| 1000 | 0.6127 | |
| 10000 | 0.5861 |
Associated Product
