FDD3510H
Part NoFDD3510H
Manufactureronsemi
DescriptionMOSFET N/P-CH 80V 4.3A TO252
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-252-4L
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs80 mOhm @ 4.3A, 10V
Power - Max1.3W
PackagingOriginal-Reel®
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Other NamesFDD3510HDKR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time7 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds800pF @ 40V
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
FET TypeN and P-Channel, Common Drain
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)80V
Detailed DescriptionMosfet Array N and P-Channel, Common Drain 80V 4.3A, 2.8A 1.3W Surface Mount TO-252-4L
Current - Continuous Drain (Id) @ 25°C4.3A, 2.8A
In Stock:
15979
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Associated Product
