FDD850N10L

FDD850N10L

Part NoFDD850N10L
ManufacturerON Semiconductor
DescriptionMOSFET 100V N-Channel PowerTrench MOSFET
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ECAD Module FDD850N10L
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Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageDPAK
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs75 mOhm @ 12A, 10V
Power Dissipation (Max)50W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFDD850N10LCT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time6 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1465pF @ 25V
Gate Charge (Qg) (Max) @ Vgs28.9nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C15.7A (Tc)
In Stock: 16111
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Pricing
QTY UNIT PRICE EXT PRICE
1 1.1074
10 1.0853
100 1.052
1000 1.0188
10000 0.9745
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product