FDD86102LZ
Part NoFDD86102LZ
Manufactureronsemi
DescriptionMOSFET N-CH 100V 8A/35A DPAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-PAK (TO-252)
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs22.5 mOhm @ 8A, 10V
Power Dissipation (Max)3.1W (Ta), 54W (Tc)
PackagingOriginal-Reel®
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFDD86102LZFSDKR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time40 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1540pF @ 50V
Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 8A (Ta), 35A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D-PAK (TO-252)
Current - Continuous Drain (Id) @ 25°C8A (Ta), 35A (Tc)
In Stock:
23921
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.581 | |
| 10 | 1.5494 | |
| 100 | 1.5019 | |
| 1000 | 1.4545 | |
| 10000 | 1.3913 |
Associated Product
