FDD86113LZ
Part NoFDD86113LZ
Manufactureronsemi
DescriptionMOSFET N-CH 100V 4.2A/5.5A DPAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-PAK (TO-252)
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs104 mOhm @ 4.2A, 10V
Power Dissipation (Max)3.1W (Ta), 29W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFDD86113LZFSCT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time39 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds285pF @ 50V
Gate Charge (Qg) (Max) @ Vgs6nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 4.2A (Ta), 5.5A (Tc) 3.1W (Ta), 29W (Tc) Surface Mount D-PAK (TO-252)
Current - Continuous Drain (Id) @ 25°C4.2A (Ta), 5.5A (Tc)
In Stock:
17404
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1685 | |
| 10 | 1.1451 | |
| 100 | 1.1101 | |
| 1000 | 1.075 | |
| 10000 | 1.0283 |
Associated Product
