FDD8N50NZTM

Part NoFDD8N50NZTM

ManufacturerON Semiconductor

DescriptionPower MOSFET, N-Channel, UniFETTM II, 500 V, 6.5 A, 850 mO, DPAK

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Specification

Vgs(th) (Max) @ Id5V @ 250µA

Vgs (Max)±25V

TechnologyMOSFET (Metal Oxide)

Supplier Device PackageDPAK

SeriesUniFET-II™

Rds On (Max) @ Id, Vgs850 mOhm @ 3.25A, 10V

Power Dissipation (Max)90W (Tc)

PackagingTape & Reel (TR)

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Other NamesFDD8N50NZTM-ND FDD8N50NZTMTR

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Moisture Sensitivity Level (MSL)1 (Unlimited)

Manufacturer Standard Lead Time6 Weeks

Lead Free Status / RoHS StatusLead free / RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds735pF @ 25V

Gate Charge (Qg) (Max) @ Vgs18nC @ 10V

FET TypeN-Channel

FET Feature-

Drive Voltage (Max Rds On, Min Rds On)10V

Drain to Source Voltage (Vdss)500V

Detailed DescriptionN-Channel 500V 6.5A (Tc) 90W (Tc) Surface Mount DPAK

Current - Continuous Drain (Id) @ 25°C6.5A (Tc)

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