FDMC7582
Part NoFDMC7582
ManufacturerON Semiconductor
DescriptionMOSFET PT5 100V/20V NCH POWERTRENCH MOSFET
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePower33
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs5 mOhm @ 16.7A, 10V
Power Dissipation (Max)2.3W (Ta), 52W (Tc)
PackagingCut Tape (CT)
Package / Case8-PowerTDFN
Other NamesFDMC7582CT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time39 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1795pF @ 13V
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)25V
Detailed DescriptionN-Channel 25V 16.7A (Ta), 49A (Tc) 2.3W (Ta), 52W (Tc) Surface Mount Power33
Current - Continuous Drain (Id) @ 25°C16.7A (Ta), 49A (Tc)
In Stock:
18610
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0914 | |
| 10 | 1.0696 | |
| 100 | 1.0368 | |
| 1000 | 1.0041 | |
| 10000 | 0.9604 |
Associated Product
TIM5359-8UL
TOSHIBA
TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power
TOSHIBA
TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power
