FDMD8680
Part NoFDMD8680
Manufactureronsemi
DescriptionFAIRCHILD SEMICONDUCTOR FDMD8680 Dual MOSFET, PowerTrench, Dual N Channel, 66 A, 80 V, 0.0033 ohm, 10 V, 3 VNew
Datasheet
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ECAD Module
Specification
Continuous Drain Current (ID)66 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)20 V
Height800 µm
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 weeks ago)
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Operating Temperature-55 °C
MountSurface Mount
Number of Channels2
Number of Pins8
Power Dissipation2.3 W
REACH SVHCNo SVHC
RoHSCompliant
Schedule B8541290080|8541290080
Threshold Voltage3 V
Turn-Off Delay Time30 ns
Turn-On Delay Time20 ns
Weight97.95918 mg
In Stock:
4963
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.15 | |
| 10 | 2.107 | |
| 100 | 2.0425 | |
| 1000 | 1.978 | |
| 10000 | 1.892 |
Associated Product
