FDP054N10
Part NoFDP054N10
ManufacturerON Semiconductor
DescriptionFAIRCHILD SEMICONDUCTOR FDP054N10 MOSFET Transistor, N Channel, 120 A, 100 V, 0.0046 ohm, 10 V, 3.5 V
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220AB
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs5.5 mOhm @ 75A, 10V
Power Dissipation (Max)263W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time6 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds13280pF @ 25V
Gate Charge (Qg) (Max) @ Vgs203nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 120A (Tc) 263W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C120A (Tc)
In Stock:
19301
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.5924 | |
| 10 | 4.5006 | |
| 100 | 4.3628 | |
| 1000 | 4.225 | |
| 10000 | 4.0413 |
Associated Product
