FDP12N50
Part NoFDP12N50
Manufactureronsemi
DescriptionMOSFET N-CH 500V 11.5A TO220-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesUniFET™
Rds On (Max) @ Id, Vgs650 mOhm @ 6A, 10V
Power Dissipation (Max)165W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1315pF @ 25V
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)500V
Detailed DescriptionN-Channel 500V 11.5A (Tc) 165W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
In Stock:
16874
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9707 | |
| 10 | 0.9513 | |
| 100 | 0.9222 | |
| 1000 | 0.893 | |
| 10000 | 0.8542 |
Associated Product
