FDP61N20
Part NoFDP61N20
Manufactureronsemi
DescriptionMOSFET N-CH 200V 61A TO220-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesUniFET™
Rds On (Max) @ Id, Vgs41 mOhm @ 30.5A, 10V
Power Dissipation (Max)417W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time7 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3380pF @ 25V
Gate Charge (Qg) (Max) @ Vgs75nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionN-Channel 200V 61A (Tc) 417W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C61A (Tc)
In Stock:
23863
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.5116 | |
| 10 | 2.4614 | |
| 100 | 2.386 | |
| 1000 | 2.3107 | |
| 10000 | 2.2102 |
Associated Product
