FDP80N06
Part NoFDP80N06
Manufactureronsemi
DescriptionMOSFET N-CH 60V 80A TO220-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesUniFET™
Rds On (Max) @ Id, Vgs10 mOhm @ 40A, 10V
Power Dissipation (Max)176W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3190pF @ 25V
Gate Charge (Qg) (Max) @ Vgs74nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionN-Channel 60V 80A (Tc) 176W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C80A (Tc)
In Stock:
15155
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9373 | |
| 10 | 0.9186 | |
| 100 | 0.8904 | |
| 1000 | 0.8623 | |
| 10000 | 0.8248 |
Associated Product
