FDP8860
Part NoFDP8860
Manufactureronsemi
DescriptionMOSFET N-CH 30V 80A TO220-3
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs2.5 mOhm @ 80A, 10V
Power Dissipation (Max)254W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time6 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds12240pF @ 15V
Gate Charge (Qg) (Max) @ Vgs222nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 80A (Tc) 254W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C80A (Tc)
In Stock:
22285
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2726 | |
| 10 | 1.2471 | |
| 100 | 1.209 | |
| 1000 | 1.1708 | |
| 10000 | 1.1199 |
Associated Product
