FDS6670AS
RoHS

FDS6670AS

Part NoFDS6670AS
Manufactureronsemi
DescriptionMOSFET N-CH 30V 13.5A 8SOIC
Datasheet Download Now!
ECAD Module FDS6670AS
Get Quotation Now!
Specification
Vgs(th) (Max) @ Id3V @ 1mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SO
SeriesPowerTrench®, SyncFET™
Rds On (Max) @ Id, Vgs9 mOhm @ 13.5A, 10V
Power Dissipation (Max)2.5W (Ta)
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesFDS6670AS-ND FDS6670ASFSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time26 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1540pF @ 15V
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 13.5A (Ta) 2.5W (Ta) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C13.5A (Ta)
In Stock: 21341
Pricing
QTY UNIT PRICE EXT PRICE
1 1.1092
10 1.087
100 1.0537
1000 1.0205
10000 0.9761
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
IRF8734PBF
IRF8734PBF
Infineon
MOSFET N-CH 30V 21A 8SO
IRFPC50APBF
IRFPC50APBF
Vishay Siliconix
MOSFET N-CH 600V 11A TO247-3
EPC2007C
EPC2007C
EPC
GANFET N-CH 100V 6A DIE OUTLINE
TK100L60W,VQ
TK100L60W,VQ
TOSHIBA
MOSFET N-CH 600V 100A TO3P
QS5K2TR
QS5K2TR
ROHM
MOSFET 2N-CH 30V 2A TSMT5
NVTFS5826NLWFTWG-UM
NVTFS5826NLWFTWG-UM
onsemi
MOSFET N-CH 60V 7.6A 8WDFN