FQB12P20TM
Part NoFQB12P20TM
Manufactureronsemi
DescriptionMOSFET P-CH 200V 11.5A D2PAK
Datasheet
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Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesQFET®
Rds On (Max) @ Id, Vgs470 mOhm @ 5.75A, 10V
Power Dissipation (Max)3.13W (Ta), 120W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesFQB12P20TM-ND
FQB12P20TMTR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time18 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)200V
Detailed DescriptionP-Channel 200V 11.5A (Tc) 3.13W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)
In Stock:
19508
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.2736 | |
10 | 2.2281 | |
100 | 2.1599 | |
1000 | 2.0917 | |
10000 | 2.0008 |