FQB8P10TM
Part NoFQB8P10TM
Manufactureronsemi
DescriptionMOSFET P-CH 100V 8A D2PAK
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD²PAK (TO-263AB)
SeriesQFET®
Rds On (Max) @ Id, Vgs530 mOhm @ 4A, 10V
Power Dissipation (Max)3.75W (Ta), 65W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other NamesFQB8P10TMCT
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time12 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds470pF @ 25V
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionP-Channel 100V 8A (Tc) 3.75W (Ta), 65W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C8A (Tc)
In Stock:
17331
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.148 | |
| 10 | 1.125 | |
| 100 | 1.0906 | |
| 1000 | 1.0562 | |
| 10000 | 1.0102 |
Associated Product
