FQD12P10TM
Part NoFQD12P10TM
Manufactureronsemi
DescriptionMOSFET P-CH 100V 9.4A TO252
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-252, (D-Pak)
SeriesQFET®
Rds On (Max) @ Id, Vgs290 mOhm @ 4.7A, 10V
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionP-Channel 100V 9.4A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252, (D-Pak)
Current - Continuous Drain (Id) @ 25°C9.4A (Tc)
In Stock:
16529
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6478 | |
| 10 | 0.6348 | |
| 100 | 0.6154 | |
| 1000 | 0.596 | |
| 10000 | 0.5701 |
Associated Product
