FQD1N80TM
Part NoFQD1N80TM
Manufactureronsemi
DescriptionMOSFET N-CH 800V 1A DPAK
Datasheet
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Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-Pak
SeriesQFET®
Rds On (Max) @ Id, Vgs20 Ohm @ 500mA, 10V
Power Dissipation (Max)2.5W (Ta), 45W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFQD1N80TMCT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time27 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds195pF @ 25V
Gate Charge (Qg) (Max) @ Vgs7.2nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)800V
Detailed DescriptionN-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C1A (Tc)
In Stock:
20689
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.439 | |
10 | 0.4302 | |
100 | 0.417 | |
1000 | 0.4039 | |
10000 | 0.3863 |